Thank you for your interest in 64-00009-001. Civil Aviation 360 offers an unmatched amount of premium NSN parts to various industries. Microcircuit Memory is an item listed with the NSN 5962-01-135-5397 and is manufactured by General Dynamics Ots Inc. If you are interested in beginning the purchasing process for this particular item 64-00009-001, please finish filling out the provided Instant RFQ form with details like quantity and contact information. After submission, a staff member will contact you in 15 minutes or less with a personalized quote.
Civil Aviation 360 provides customers with a large inventory of NSN part such as 64-00009-001 that are available for immediate purchase. A National Stock Number (NSN) is a number used to help classify items as they make their way through the federal supply system. Each NSN is unique, and the several digits describe different qualities like name, manufacturer, part number, and more. This classification system was created to eliminate confusion and duplication of orders, particularly in the United States Military Services. Since its first use after World War II, it has been officially recognized by the U.S. DOD and other NATO countries. For your convenience, 5962-01-135-5397 is also listed with its CAGE Code: 21562 and manufacturer: General Dynamics Ots Inc. All items that Civil Aviation 360 provides come with expedited shipping and manufacturer trace documentation, as applicable.
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH1 180 INCHES MINIMUM AND 1 220 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 560 INCHES MINIMUM AND 0 600 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 080 INCHES MINIMUM AND 0 130 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 070 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0125 0 DEG CELSIUS |
MEMORY | AGAV | END ITEM IDENTIFICATION4920-01-054-8585 81755 |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMABLE |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMMETAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN8 INPUT |
MEMORY | CRHL | BIT QUANTITY2048 |
MEMORY | CSWJ | WORD QUANTITY256 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC0 5 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC1000 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | TEST | TEST DATA DOCUMENT16340-64-00009 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRA |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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